IPD090N03LGE8177 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
IPD090N03LGE8177 Datasheet PDF : 9 Pages
| |||
13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
IPD090N03L G E8177
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
12
15 V
6V
24 V
10
8
100 °C 25 °C
10
150 °C
6
4
2
1
10-1
100
101
102
tAV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
0
103
0
4
8
12
16
20
Qgate [nC]
16 Gate charge waveforms
34
V GS
32
30
28
26
V gs(th)
24
22
20
-60 -20
20
60 100 140 180
Tj [°C]
Q g(th)
Q gs
Rev. 2.0
page 7
Qg
Q sw
Q gd
Q gate
2014-01-14
Share Link: 