IPD090N03LGE8177 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
IPD090N03LGE8177 Datasheet PDF : 9 Pages
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Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating
Type
IPD090N03L G E8177
IPD090N03L G E8177
Product Summary
VDS
RDS(on),max
ID
30 V
9 mW
40 A
Package
Marking
PG-TO252-3-11
090N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=12 A, R GS=25 W
I D=40 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Rev. 2.0
page 1
Value
40
37
40
30
280
40
40
6
±20
Unit
A
mJ
kV/µs
V
2014-01-14
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