IPD090N03LGE8177 View Datasheet(PDF) - Infineon Technologies
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Description
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IPD090N03LGE8177 Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
IPD090N03L G E8177
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
16
2.5
14
2
12
10
98 %
1.5
8
typ
6
1
4
0.5
2
0
-60 -20
20
60 100 140 180
Tj [°C]
0
-60 -20 20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
104
103
103
Ciss
Coss
102
Crss
101
25 °C
102
175 °C, 98%
175 °C
z
25 °C, 98%
101
100
0
Rev. 2.0
10
20
VDS [V]
100
30
0
page 6
0.5
1
1.5
2
VSD [V]
2014-01-14
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