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Part Name
Description
IPD090N03LGE8177 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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IPD090N03LGE8177
OptiMOS™3 Power-Transistor
Infineon Technologies
IPD090N03LGE8177 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
1 Power dissipation
P
tot
=f(
T
C
)
50
2 Drain current
I
D
=f(
T
C
);
V
GS
≥10 V
IPD090N03L G E8177
50
40
40
30
30
20
20
10
10
0
0
50
100
150
200
T
C
[
°
C]
0
0
50
100
150
200
T
C
[
°
C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
3
10
limited by on-state
resistance
10
2
DC
10
1
10
0
1 µs
10 µs
100 µs
1 ms
10 ms
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
single pulse
10
-1
10
-1
Rev. 2.0
10
0
10
1
V
DS
[V]
10
2
0.01
0
10
-6
0
10
-5
0
10
-4
0
10
-3
0
10
-2
0
10
-1
1
10
0
t
p
[s]
page 4
2014-01-14
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