DG306AE25(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

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DG306AE25
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG306AE25

3.0

2.5

2.0

1.5

1.0

0.5

0

0

tr

td

Conditions:

Tj = 125˚C, IFGM = 20A

Cs = 1.0µF, Rs = 10 Ohms,

dIT/dt = 300A/µs, VD = 1500V

100

200

300

400

500

600

On-state current - (A)

Fig.13 Delay & rise time vs turn-on current

5.0

Conditions:

4.5

IT = 600A

Tj = 125˚C

Cs = 1.0µF

4.0

Rs = 10 Ohms

dIT/dt = 300A/µs

3.5

dIFG/dt = 20A/µs

VD = 1500V

3.0

2.5

tr

2.0

1.5

1.0

td

0.5

0

0 10 20 30 40 50 60 70 80

Peak forward gate current IFGM- (A)

Fig.14 Delay time & rise time vs peak forward gate current

9/19

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