DG306AE25(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG306AE25
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

1000

750

Conditions:

Tj = 125˚C,

VDM = 1500V

dIGQ/dt = 15A/µs

DG306AE25

500

250

0

0.075

0.5

1.0

1.5

2.0

Snubber capacitance Cs - (µF)

Fig.3 Dependence of ITCM on Cs

dc

0.050

0.025

0

0.001

0.01

0.1

1.0

10

Time - s

Fig.4 Maximum (limit) transient thermal impedance - double side cooled

12.5

10.0

7.5

5.0

2.5

0

0.0001

0.001

0.01

0.1

1.0

Pulse duration - (s)

Fig.5 Surge (non-repetitive) on-state current vs time

5/19

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