DG306AE25(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

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DG306AE25
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG306AE25

10/19

550

Conditions:

500

Tj = 25˚C

Cs = 1.0µF

dIGQ/dt = 15A/µs

450

VDM = 2000V

VDM = 1500V

400

VDM = 1000V

350

300

250

200

150

100

50

0

100

200

300

400

500

600

On-state current - (A)

Fig.15 Turn-off energy loss vs on-state current

575

VDM = 2000V

550

525

500

475

VDM = 1500V

450

Conditions:

IT = 600A

425

Tj = 25˚C

Cs = 1.0µF

400

VDM = 1000V

375

350

10 15 20 25 30 35 40 45 50

Rate of rise of reverse gate current dIGQ/dt- (A/µs)

Fig.16 Turn-off energy vs rate of rise of reverse gate current

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