DG306AE25(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

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DG306AE25
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG306AE25

400

Conditions:

350

Tj = 25˚C

IFGM = 20A

Cs = 1.0µF

300 Rs = 10 Ohms

dI/dt = 300A/µs

250 dIFG/dt = 20A/µs

VD = 2000V

VD = 1500V

200

VD = 1000V

150

100

50

0

0

100

200

300

400

500

600

On-state current - (A)

Fig.8 Turn-on energy vs on-state current

500

450

400

350

VD = 2000V

300

250

VD = 1500V

200

VD = 1000V

Conditions:

150 IT = 600A, Tj = 25˚C, Cs = 1.0µF,

Rs = 10 Ohms, dIT/dt = 300A/µs, dIFG/dt = 20A/µs

100

0 10 20 30 40 50 60 70 80

Peak forward gate current IFGM- (A)

Fig.9 Turn-on energy vs peak forward gate current

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