DG306AE25(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

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DG306AE25
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG306AE25

1000

900

800

Conditions:

Tj = 125˚C

Cs = 1.0µF

dIGQ/dt = 15A/µs

700

600

500

400

300

200

100

0

100

200

300

400

500

On-state current - (A)

Fig.17 Turn-off energy vs on-state current

VDM = 2000V

VDM = 1500V

VDM = 1000V

600

1100

1000

VDM = 2000V

900

VDM = 1500V

800

700

Conditions: VDM = 1000V

IT = 600A

Tj = 125˚C

Cs = 1.0µF

600

10 15 20 25 30 35 40 45 50

Rate of rise of reverse gate current dIGQ/dt- (A/µs)

Fig.18 Turn-off energy loss vs rate of rise of reverse gate current

11/19

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