DG306AE25(2000) View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG306AE25
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG306AE25

300

Conditions:

IT = 600A

Cs = 1.0µF

250

200

Tj = 125˚C

Tj = 25˚C

150

100

10 15 20 25 30 35 40 45 50

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.25 Reverse gate current vs rate of rise of reverse gate current

1375

Conditions:

1250

VDM = 1500V

dIGQ/dt = 15A/µs

1125

1000

875

750

Tj = 125˚C

Tj = 25˚C

625

500

375

250

125

0

100

200

300

400

500

600

On-state current - (A)

Fig.26 Turn-off gatecharge vs on-state voltage

15/19

Share Link: