BSB008NE2LX(2010) View Datasheet(PDF) - Infineon Technologies
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BSB008NE2LX Datasheet PDF : 13 Pages
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Table 14
13 Avalanche characteristics
OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics diagrams
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
Table 15
15 Drain-source breakdown voltage
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Target Data Sheet
8
0.2, 2010-07-28
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