BSB008NE2LX(2010) View Datasheet(PDF) - Infineon Technologies
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BSB008NE2LX Datasheet PDF : 13 Pages
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Table 12
9 Drain-source on-state resistance
OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics diagrams
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
Table 13
11 Typ. capacitances
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
Target Data Sheet
IF=f(VSD); parameter: Tj
7
0.2, 2010-07-28
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