BSB008NE2LX(2010) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BSB008NE2LX
(Rev.:2010)

OptiMOS™ Power-MOSFET

Infineon Technologies 

OptiMOS™ Power-MOSFET

BSB008NE2LX

Electrical characteristics

4

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4 Static characteristics

Parameter

Symbol

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V(BR)DSS

VGS(th)

IDSS

Min.

25

1

-

-

Values

Typ.

Max.

-

-

-

2.2

0.1

10

10

100

Gate-source leakage current

IGSS

-

Drain-source on-state resistance RDS(on) -

-

10

100

0.75

1.0

0.6

0.8

Gate resistance

Transconductance

RG

-

0.5

-

gfs

120

240

Unit Note / Test Condition

V

VGS=0 V, ID=1 mA

VDS=VGS, ID=250 µA

µA

VDS=25 V, VGS=0 V,

Tj=25 °C

VDS=25 V, VGS=0 V,

Tj=125 °C

nA

VGS=20 V, VDS=0 V

mΩ VGS=4.5 V, ID=25A

VGS=10 V, ID=30 A

Ω

S

|VDS|>2|ID|RDS(on)max,

ID=30 A

Table 5 Dynamic characteristics

Parameter

Symbol

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Min.

-

-

-

-

-

-

-

Values

Typ.

13000

4300

3300

tbd

tbd

tbd

tbd

Max.

-

-

-

-

-

-

-

Unit

pF

Note /

Test Condition

VGS=0 V, VDS=12 V,

f=1 MHz

ns

VDD=12V, VGS=10 V,

ID=30 A, RG= 1.6 Ω

Target Data Sheet

3

0.2, 2010-07-28

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