BSB008NE2LX(2010) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BSB008NE2LX
(Rev.:2010)

OptiMOS™ Power-MOSFET

Infineon Technologies 

Table 10

5 Typ. output characteristics TC=25 °C

OptiMOS™ Power-MOSFET

BSB008NE2LX

Electrical characteristics diagrams

6 Typ. drain-source on-state resistance

ID=f(VDS); Tj=25 °C; parameter: VGS

Table 11

7 Typ. transfer characteristics

RDS(on)=f(ID); Tj=25 °C; parameter: VGS

8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|RDS(on)max

Target Data Sheet

gfs=f(ID); Tj=25 °C

6

0.2, 2010-07-28

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