BSZ100N03LSG View Datasheet(PDF) - Infineon Technologies
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Description
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BSZ100N03LSG Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
12
BSZ100N03LS G
6V
15 V
10
24 V
8
10
6
25 °C
125 °C
4
100 °C
2
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
0
1000
0
4
8
12
16
Q gate [nC]
16 Gate charge waveforms
34
V GS
32
30
28
26
V g s(th)
24
22
Q g(th)
20
-60
-20
20
60 100 140 180
T j [°C]
Q gs
Rev. 2.0
page 7
Qg
Q sw
Q gd
Q gate
2010-03-19
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