BSZ100N03LSG View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BSZ100N03LSG Datasheet PDF : 9 Pages
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OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
BSZ100N03LS G
Product Summary
V DS
R DS(on),max
ID
30 V
10 mΩ
40 A
PG-TSDSON-8
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSZ100N03LS G
Package
Marking
PG-TSDSON-8 100N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=60 K/W2)
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=20 A, R GS=25 Ω
I D=40 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Rev. 2.0
page 1
Value
40
28
36
23
12
160
20
15
6
±20
Unit
A
mJ
kV/µs
V
2010-03-19
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