BSZ100N03LSG View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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BSZ100N03LSG Datasheet PDF : 9 Pages
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Parameter
Symbol Conditions
BSZ100N03LS G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=30 A, R G=1.6 Ω
-
tf
-
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q gs
-
Q g(th)
-
Q gd
V DD=15 V, I D=30 A,
-
Q sw
V GS=0 to 4.5 V
-
Qg
-
V plateau
-
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
Q oss
V DD=15 V, V GS=0 V
-
Reverse Diode
Diode continuous forward current I S
-
T C=25 °C
Diode pulse current
I S,pulse
-
Diode forward voltage
V SD
V GS=0 V, I F=20 A,
T j=25 °C
-
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
4) See figure 13 for more detailed information
5) See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
1100
440
21
2.9
2.6
13
2.4
1500 pF
590
-
- ns
-
-
-
3.5
4.6 nC
1.6
2.1
1.5
2.5
3.4
5.0
6.3
8.3
3.5
-V
13
17
5.4
7.2 nC
11
15
-
28 A
-
160
0.87
1.1 V
-
10 nC
2010-03-19
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