BSZ100N03LSG View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BSZ100N03LSG Datasheet PDF : 9 Pages
| |||
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=20 A; V GS=10 V
16
BSZ100N03LS G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
2.5
2
12
98 %
1.5
typ
8
1
4
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
103
Ciss
Coss
102
Crss
101
100
10
150 °C
25 °C
150 °C, 98%
25 °C, 98%
100
0
Rev. 2.0
10
20
V DS [V]
1
30
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2010-03-19
Share Link: 