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BSZ123N08NS3G View Datasheet(PDF) - Infineon Technologies
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Description
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BSZ123N08NS3G
OptiMOS™3 Power-Transistor
Infineon Technologies
BSZ123N08NS3G Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter:
T
j(start)
100
125 °C 100 °C
25 °C
10
BSZ123N08NS3 G
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=20 A pulsed
parameter:
V
DD
12
40 V
10
16 V
64 V
8
6
4
2
1
0.1
0
1
10
100
1000
0
t
AV
[µs]
5
10
15
20
Q
gate
[nC]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
16 Gate charge waveforms
100
V
GS
95
90
85
80
V
g s(th)
75
Rev. 2.4
70
65
Q
g(th)
60
-60 -20
20
60 100 140 180
T
j
[°C]
Q
gs
page 7
Q
g
Q
sw
Q
gd
Q
gate
2009-11-12
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