BSZ123N08NS3G View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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BSZ123N08NS3G Datasheet PDF : 9 Pages
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Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
T C=25 °C
T A=25 °C,
R thJA=60 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSZ123N08NS3 G
Value
Unit
66
W
2.1
-55 ... 150
°C
55/150/56
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Device on PCB
R thJA minimal footprint
-
6 cm2 cooling area2)
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
80
V GS(th) V DS=V GS, I D=33 µA
2
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
V DS=80 V, V GS=0 V,
T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=20 A
-
V GS=6 V, I D=10 A
-
RG
-
g fs
|V DS|>2|I D|R DS(on)max,
I D=20 A
17
-
1.9 K/W
-
-
-
60
-
-V
2.8
3.5
0.1
1 µA
10
100
10
100 nA
10.3 12.3 mΩ
13.9
24
2
-Ω
34
-S
Rev. 2.4
page 2
2009-11-12
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