BSZ123N08NS3G View Datasheet(PDF) - Infineon Technologies
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Description
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BSZ123N08NS3G Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=20 A; V GS=10 V
25
BSZ123N08NS3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: ID
4
20
15
max
typ
10
5
3
330 µA
33 µA
2
1
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60
-20
20
60
100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
Ciss
103
100
Coss
150°C, max
102
150 °C 25 °C
10
Crss
101
100
0
Rev. 2.4
20
40
60
V DS [V]
1
80
0.0
page 6
25°C, max
0.5
1.0
1.5
V SD [V]
2.0
2009-11-12
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