Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name
Description
BSC072N03LDG View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BSC072N03LDG
OptiMOS™3 Power-Transistors
Infineon Technologies
BSC072N03LDG Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter:
T
j(start)
100
25 °C
10
100 °C
125 °C
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=20 A pulsed
parameter:
V
DD
12
BSC072N03LD G
15 V
10
6V
24 V
8
6
1
4
2
0.1
1
10
100
t
AV
[µs]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
0
1000
0
10
20
30
40
Q
gate
[nC]
16 Gate charge waveforms
34
V
GS
32
30
28
26
V
g s(th)
24
22
Q
g(th)
20
-60
-20
20
60 100 140 180
T
j
[°C]
Q
gs
Rev. 1.4
page 7
Q
g
Q
sw
Q
gd
Q
gate
2009-10-23
Share Link:
datasheetbank.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]