BSC072N03LDG View Datasheet(PDF) - Infineon Technologies
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Description
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BSC072N03LDG Datasheet PDF : 10 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=20 A; V GS=10 V
BSC072N03LD G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
12
2.5
10
2
8
98 %
1.5
6
typ
1
4
0.5
2
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
100
150 °C, 98%
Ciss
103
Coss
25 °C
102
Crss
10
150 °C
25 °C, 98%
101
0
Rev. 1.4
10
20
V DS [V]
1
30
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2009-10-23
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