MJE18002G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
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MJE18002G Datasheet PDF : 8 Pages
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MJE18002
5
4 VCE
3
2
1
0
dyn 1 ms
dyn 3 ms
10
9 IC
8
7
6
5 VCLAMP
tsi
10% VCLAMP
90% IC
tfi
TC
10% IC
−1
−2
90% IB
4
3 IB
90% IB1
−3
1 ms
2
−4
3 ms
1
−5 IB
0
0
1
2
3 TIM4 E 5
6
7
8
0
1
2
3
4
5
6
TIME
7
8
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
1 mF
150 W
100 W
3V
3V
MPF930
+10 V
MPF930
MTP8P10
100 mF
MTP8P10
MUR105
Rb1
Iout
A
VCE
IB1
IB
50 W
COMMON
500 mF
−Voff
MJE210
150 W
3V
Rb2
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
VCE PEAK
IC PEAK
IB2
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
1.00
0.5
TYPICAL THERMAL RESPONSE
0.2
0.1
0.10 0.05
0.02
SINGLE PULSE
0.01
0.01
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RqJC(t) = r(t) RqJC
RqJC = °C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.10
1.00
10.00
100.00
t, TIME (ms)
Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18002
1000.0
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