MJE18002G View Datasheet(PDF) - ON Semiconductor
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MJE18002G Datasheet PDF : 8 Pages
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MJE18002
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450
−
−
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
−
−
100
mAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 800 V, VEB = 0)
TC = 125°C
TC = 125°C
ICES
−
−
100
mAdc
−
−
500
−
−
100
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)
Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)
Collector−Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 125°C
@ TC = 125°C
DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc)
DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc)
DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
@ TC = 125°C
@ TC = 125°C
@ TC = 125°C
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 8.0 V)
Dynamic Saturation:
determined 1.0 ms and
3.0 ms after rising IB1
reach 0.9 final IB1
(see Figure 18)
IC = 0.4 A
IB1 = 40 mA
VCC = 300 V
IC = 1.0 A
IB1 = 0.2 A
VCC = 300 V
1.0 ms
3.0 ms
1.0 ms
3.0 ms
2. Proper strike and creepage distance must be provided.
@ TC = 125°C
@ TC = 125°C
@ TC = 125°C
@ TC = 125°C
IEBO
VBE(sat)
VCE(sat)
hFE
fT
Cob
Cib
VCE(dsat)
−
−
100
mAdc
−
0.825
1.1
Vdc
−
0.92
1.25
Vdc
−
0.2
0.5
−
0.2
0.5
−
0.25
0.5
−
0.3
0.6
14
−
34
−
−
27
−
11
17
−
11
20
−
6.0
8.0
−
5.0
8.0
−
10
20
−
−
13
−
MHz
−
35
60
pF
−
400
600
pF
−
3.5
−
Vdc
−
8.0
−
−
1.5
−
−
3.8
−
−
8.0
−
−
14
−
−
2.0
−
−
7.0
−
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