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CS5127GDWR16 View Datasheet(PDF) - Cherry semiconductor

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Description
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CS5127GDWR16 Datasheet PDF : 24 Pages
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Electrical Characteristics: 0¡C < TA < 70¡C; 0¡C < TJ < 125¡C; 9.4V < VIN < 20V; CT = 330 pF; RT = 27k½;
unless otherwise stated.
PARAMETER
s Error Amplifiers
VFB Reference Voltage
Input Bias Current
Open Loop Gain
Unity Gain Bandwidth
PSRR
COMP Source Current
COMP Sink Current
COMP Output Low Voltage
s PWM Comparators
VFFB Bias Current
Propagation Delay
Common Mode
Maximum Input Voltage
TEST CONDITIONS
VCOMP = VVFB
VFB = 1.275V
MIN
1.245
f = 120Hz
VCOMP = 3V, VVFB = 1.1V
0.9
VCOMP = 1.2V, VVFB = 1.45V
10
VVFB = 1.45V, ICOMP = 0.3 mA
0.50
TYP
1.275
0.1
85
1.0
80
1.3
16
0.85
MAX
1.300
1.0
2.0
24
1.00
UNIT
V
µA
dB
MHz
dB
mA
mA
V
VFFB = 0
2.0
20
µA
VFFB rising to VGATE falling
100
250
ns
2.9
3.3
V
s ENABLE Lead
ENABLE High Threshold
ENABLE Bias Current
channel 2 enabled
VENABLE = 0
s Gate Driver Outputs
Output Low Saturation Voltage
Output High Saturation Voltage
Output Voltage under Lockout
Output Rise Time
Output Fall Time
IGATE = 20 mA
IGATE = 100 mA
IGATE = 20 mA
IGATE = 100 mA
VIN = 6V, IGATE = 1 mA
no load
no load
1.5
2.5
3.5
V
100
250
400
µA
0.1
0.4
V
0.25
2.50
V
1.5
2.0
V
1.6
3.0
V
0.1
0.2
V
30
ns
10
ns
s Undervoltage Lockout
Turn On Threshold
Turn Off Threshold
7.4
8.4
9.4
V
6.8
7.8
8.8
V
s Supply Current
Start Up Current
Operating Current
VIN = 6V
VCT = 0V, no load
0.4
0.8
mA
17.5
25
mA
3

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