M5M29FB800FP View Datasheet(PDF) - MITSUBISHI ELECTRIC

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Description

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M5M29FB800FP

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M5M29FB/T800FP,VP,RV-80,-10,-12

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

Vcc POWER UP / DOWN TIMING

3.3V

VCC

GND

/RP

VIH

VIL

Read /Write Inhibit

tVCS

/CE

VIH

VIL

tPS

/WE

VIH

VIL

Read /Write Inhibit

tPS

Read /Write Inhibit

AC WAVEFORMS FOR READ OPERATION AND TEST CONDITIONS

VIH

ADDRESSES

VIL

VIH

/CE

VIL

/OE

VIH

VIL

/WE

DATA

VIH

VIL

VOH

VOL

/RP

VIH

VIL

HIGH-Z

tPS

ADDRESS VALID

tRC

ta (AD)

ta (CE)

tDF(CE)

tOEH

tCLZ

ta (OE)

tOLZ

tDF(OE)

tOH

OUTPUT VALID

tPHZ

HIGH-Z

TEST CONDITIONS

FOR AC CHARACTERISTICS

Input voltage : VIL = 0V, VIH = 3.0V

Input rise and fall times : ≤5ns (80ns)

≤10ns (100/120ns)

Reference voltage

at timing measurement : 1.5V

Output load : 1TTL gate +

CL(100pF for 100/120ns)

CL(30pF for 80ns)

or

1.3V

1N914

3.3kΩ

DUT

CL =30/100pF

BYTE AC WAVEFORMS FOR READ OPERATION

ADDRESSES VIH

(A0 - A18) VIL

VIH

/CE

VIL

VIH

/OE

VIL

/BYTE VIH

VIL

VIH

DATA

(D0 - D7) VIL

HIGH-Z

ADDRESS VALID

ta(AD)

ta(CE)

ta(OE)

ta(BYTE)

tOLZ

tCLZ

tBAD

tBCD

tBAD

OUTPUT VALID

DATA

VIH

(D8 - D14) VIL

HIGH-Z

ADDRESS VALID

ta(BYTE)

VALID

tBHZ

VALID

VALID

ta(AD)

tDF(CE)

tDF(OE)

tOH

D15 / A-1 VIH

VIL

A-1

D15

A-1

When /BYTE=VIH, /CE=/OE=VIL , D15/A-1 is output status. At this time, input signal must not be applied.

9

May 1997 , Rev.6.1

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