M5M29FB800FP View Datasheet(PDF) - MITSUBISHI ELECTRIC

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M5M29FB800FP

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M5M29FB/T800FP,VP,RV-80,-10,-12

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

SOFTWARE COMMAND DEFINITIONS

The device operations are selected by writing specific software

command into the Command User Interface.

Read Array Command (FFH)

The device is in Read Array mode on initial device powerup and

after exit from deep powerdown, or by writing FFH to the

Command User Interface. The device remains in Read Array

mode until the other commands are written.

Read Device Identifier Command (90H)

Though PROM programmers can normally read device identifier

codes by raising A9 to VID, multiplexing high voltage onto address

lines is not desired for micro-processor system. It is an other

means to read device identifier codes that Read Device Identifier

Code Command(90H) is written to the command latch. Following

the command write, the manufacturer code and the device code

can be read from address 0000H and 0001H, respectively.

Read Status Register Command (70H)

The Status Register is read after writing the Read Status Register

command of 70H to the Command User Interface.

The contents of Status Register are latched on the later falling

edge of /OE or /CE. So /CE or /OE must be toggled every status

read.

DATA PROTECTION

The M5M29FB/T800 provides selectable block locking of memory

blocks. Each block has an associated nonvolatile lock-bit which

determines the lock status of the block. In addition, the

M5M29FB/T800 has a master Write Protect pin (WP) which

prevents any modifications to memory blocks whose lock-bits are

set to "0", when /WP is low. When /WP is high or /RP is VHH, all

blocks can be programmed or erased regardless of the state of

the lock-bits, and the lock-bits are cleared to "1" by erase.

Power Supply Voltage

When the power supply voltage (Vcc) is less than 2.2V, the device

is set to the Read-only mode.

A delay time of 2 us is required before any device operation is

initiated. The delay time is measured from the time Vcc reaches

Vccmin (3.0V).

During power up, /RP=GND is recommended. Falling in Busy

status is not recommended for possibility of damaging the device.

Clear Status Register Command (50H)

The Erase Status and Program Status bits are set to "1"s by the

Write State Machine and can only be reset by the Clear Status

Register command of 50H. These bits indicates various failure

conditions.

Block Erase / Confirm Command (20H/D0H)

Automated block erase is initiated by writing the Block Erase

command of 20H followed by the Confirm command of D0H. An

address within the block to be erased is required. The WSM

executes iterative erase pulse application and erase verify

operation.

Page Program Commands(41H)

Page Program allows fast programming of 128words of data.

Writing of 41H initiates the page program operation. From 2nd

cycle to 129th cycle write data must be serially inputted. Address

A6-0 have to be incremented from 00H to 7FH. After completion

of data loading, the WSM controls the program pulse application

and verify operation.

Basically re-program must not be done on a page which has

already programmed.

Suspend/Resume Command (B0H/D0H)

Writing the Suspend command of B0H during block erase

operation interrupts the block erase operation and allows read out

from another block of memory. Writing the Suspend command of

B0H during program operation interrupts the program operation

and allows read out from another block of memory. The device

continues to output Status Register data when read, after the

Suspend command is written to it. Polling the WSM Status and

Suspend Status bits will determine when the erase operation or

program operation has been suspended. At this point, writing of

the Read Array command to the CUI enables reading data from

blocks other than that which is suspended. When the Resume

command of D0H is written to the CUI, the WSM will continue with

the erase or program processes.

3

May 1997 , Rev.6.1

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