M5M29FB800FP View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

View to exact match

M5M29FB800FP

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M5M29FB/T800FP,VP,RV-80,-10,-12

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Conditions

Min Max Unit

Vcc

Vcc voltage

VI1

All input or output voltage except Vcc,A9,/RP1)

With respect to Ground

-0.2 4.6

V

-0.6 4.6

V

VI2

Ta

Tbs

Tstg

I OUT

A9,RP supply voltage

Ambient temperature

Temperature under bias

Storage temperature

Output short circuit current

-0.6 14.0

V

0

70

°C

-10

80

°C

-65 125

°C

100

mA

1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage

on input/output pins is VCC+0.5V which, during transitions, may overshoot to VCC+1.5V for periods <20ns.

CAPACITANCE

Symbol

Parameter

CIN

COUT

Input capacitance (Address, Control Pins)

Output capacitance

Test conditions

Limits

Min Typ Max

Unit

Ta = 25°C, f = 1MHz, Vin = Vout = 0V

8

pF

12

pF

DC ELECTRICAL CHARACTERISTICS (Ta = 0 ~ 70°C, Vcc = 3.3V±0.3V, unless otherwise noted)

Symbol

Parameter

Test conditions

Limits

Min Typ1) Max

Unit

ILI

Input leakage current

ILO

Output leakage current

ISB1

VCC standby current

ISB2

0V≤VIN≤VCC

0V≤VOUT≤VCC

VCC = 3.6V, VIN=VIL/VIH, /CE = /RP =/WP = VIH

VCC = 3.6V, VIN=GND or VCC,

/CE = /RP = /WP= VCC±0.3V

±1.0

µA

±10

µA

50 200

µA

1

5

µA

ISB3

VCC deep powerdown current

ISB4

VCC = 3.6V, VIN=VIL/VIH, /RP = VIL

VCC = 3.6V, VIN=GND or VCC, /RP =GND±0.3V

5

15

µA

1

5

µA

ICC1

VCC read current for Word or Byte

VCC = 3.6V, VIN=VIL/VIH, /CE = VIL,

/RP=OE=VIH, f = 10MHz, IOUT = 0mA

7

25

mA

ICC2

VCC Write current for Word or Byte

VCC = 3.6V,VIN=VIL/VIH, /CE =/WE= VIL,

/RP=/OE=VIH

30

mA

ICC3

VCC program current

VCC = 3.6V, VIN=VIL/VIH, /CE = /RP =/WP = VIH

40

mA

ICC4

VCC erase current

VCC = 3.6V, VIN=VIL/VIH, /CE = /RP =/WP = VIH

40

mA

ICC5

VCC suspend current

I RP

/RP all block unlock current

VCC = 3.6V, VIN=VIL/VIH, /CE = /RP =/WP = VIH

/RP = VHH max

200

µA

100

µA

IID

VIHH

A9 intelligent identifier current

/RP unlock voltage

A9 = VID max

100

µA

11.4 12.0 12.6

V

VID

A9 intelligent identifier voltage

VIL

Input low voltage

VIH

Input high voltage

11.4 12.0 12.6

V

– 0.5

0.8

V

2.0

Vcc+0.5

V

VOL

VOH1

VOH2

Output low voltage

Output high voltage

IOL = 5.8mA

IOH = –2.5mA

IOH = –100µA

0.85Vcc

Vcc–0.4

0.45

V

V

V

VLKO

Low VCC Lock-Out voltage 2)

1.5

2.5

V

All currents are in RMS unless otherwise noted.

1) Typical values at Vcc=3.3V, Ta=25°C

2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than VLKO.

If Vcc is less than VLKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than VLKO, the alteration of memory contents

may occur.

6

May 1997 , Rev.6.1

Share Link: