EDS1232AATA-75MI View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

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EDS1232AATA-75MI

128M bits SDRAM WTR (Wide Temperature Range)

Elpida Memory, Inc 

EDS1232AATA-MI

Read command (/CS, /CAS = Low, /RAS, /WE = High)

Read data is available after /CAS latency requirements have been met. This command sets the burst start address

given by the column address.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0, BA1

(Bank select)

E A10

Add

Col.

Column Address and and Read Command

OCBR (auto) refresh command (/CS, /RAS, /CAS = Low, /WE, CKE = High)

This command is a request to begin the CBR (auto) refresh operation. The refresh address is generated internally.

Before executing CBR (auto) refresh, all banks must be precharged. After this cycle, all banks will be in the idle

(precharged) state and ready for a row activate command. During tRC period (from refresh command to refresh or

L activate command), the Synchronous DRAM cannot accept any other command

CLK

CKE H

/CS

/RAS

P/CAS

/WE

BA0, BA1

(Bank select)

rA10

Add

oduct CBR (auto) Refresh Command

Data Sheet E0340E30 (Ver. 3.0)

13

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