DG858BW45 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG858BW45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG858BW45

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated

otherwise. DO NOT SCALE.

2 holes Ø3.6 x 2.0 deep (One in each electrode)

Auxiliary cathode connector Ø3.0

Gate connector Ø3.0

Ø120 max

Ø84.6 nom

Anode

Ø84.6 nom

72 max

Cathode

Nominal weight: 1700g

Clamping force: 40kN ±10%

Lead double coax, length: 630mm

Package outine type code: W

ASSOCIATED PUBLICATIONS

Title

Calculating the junction temperature or power semiconductors

GTO gate drive units

Recommendations for clamping power semiconductors

Use of V , r on-state characteristic

TO T

Impoved gate drive for GTO series connections

Application Note

Number

AN4506

AN4571

AN4839

AN5001

AN5177

18/19

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