DG858BW45 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG858BW45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG858BW45

15000

14000

13000

Conditions:

IT = 3000A

CS = 3.0µF

12000

11000

Tj = 125°C

10000

9000

8000

Tj = 25°C

7000

20 25 30 35 40 45 50 55 60

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Figure 28. Turn-off gate charge vs rate of rise of reverse gate current

1000

Tj = 125°C

500

VD = 2250V

VD = 3000V

0

0.1

1.0

10

100

1000

Gate cathode resistance RGK - (Ohms)

Figure 29. Rate of rise of off-state voltage vs gate cathode resistance

16/19

Share Link: