DG858BW45 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
DG858BW45 Datasheet PDF : 19 Pages
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1000
900
Conditions:
IT = 3000A
CS = 3.0µF
800
Tj = 125°C
Tj = 25°C
DG858BW45
700
600
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Figure 26. Reverse gate current vs rate of rise of reverse gate current
12000
Conditions:
10000
CS = 3.0µF
dIGQ/dt = 40A/µs
8000
Tj = 125°C
6000
Tj = 25°C
4000
2000
0
0
500
1000
1500
2000
2500
3000
On-state current IT - (A)
Figure 27. Turn-off gate charge vs on-state current
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