DG858BW45 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG858BW45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG858BW45

16000

14000

12000

Conditions:

Tj = 125°C

VDM = VDRM

dIGQ/dt = 40A/µs

10000

Cs = 4.0µF

Cs = 3.0µF

Cs = 2.5µF

Cs = 2.0µF

8000

6000

4000

2000

0

0

500

1000

1500

2000

2500

3000

On-state current IT - (A)

Figure 20. Turn-off energy vs on-state current

25.0

22.5

Conditions:

Cs = 3.0µF

dIGQ/dt = 40A/µs

20.0

Tj = 125°C

Tj = 25°C

3500

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0

500

1000

1500

2000

2500

On-state current IT - (A)

Figure 21. Gate storage time vs on-state current

3000

12/19

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