256-MBIT (32M × 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMedia™)

DESCRIPTION
The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).

FEATURES
• Organization
    Memory cell array 528 × 64K × 8
    Register 528 × 8
    Page size 528 bytes
    Block size (16K + 512) bytes
• Modes
    Read, Reset, Auto Page Program,
    Auto Block Erase, Status Read
• Mode control
    Serial input/output, Command control
• Complies with the SmartMediaTM Electrical
    Specification and Data Format Specification
    issued by the SSFDC Forum
• Power supply
    VCC = 3.3 V ± 0.3 V
• Access time
    Cell array-register 25 µs max
    Serial Read cycle 50 ns min
• Operating current
    Read (50-ns cycle) 10 mA typ.
    Program (avg.) 10 mA typ.
    Erase (avg.) 10 mA typ.
    Standby 100 µA max
• Package
    TC58NS256DC: FDC-22A (Weight: 1.8 g typ.)