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MGFC45V3436A(1999) Datasheet - MITSUBISHI ELECTRIC

MGFC45V3436A image

Part Name
MGFC45V3436A

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MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC45V3436A is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
    Class A operation
    Internally matched to 50(ohm) system
    High output power
        P1dB = 32W (TYP.) @ f=3.4 - 3.6 GHz
    High power gain
        GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz
    High power added efficiency
        P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz
    Low distortion [item -51]
        IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.


APPLICATION
    item 01 : 3.4 - 3.6 GHz band power amplifier
    item 51 : 3.4 - 3.6 GHz band digital radio communication

Page Link's: 1  2 

Part Name
Description
PDF
MFG CO.
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . ( Rev : 1998 )
MITSUBISHI ELECTRIC
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi

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