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MGFC39V3436A Datasheet - MITSUBISHI ELECTRIC

MGFC39V3436 image

Part Name
MGFC39V3436A

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2 Pages

File Size
132 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
   Class A operation
   Internally matched to 50(ohm) system
   High output power
      P1dB = 8W (TYP.) @ f=3.4 - 3.6 GHz
   High power gain
      GLP = 11 dB (TYP.) @ f=3.4 - 3.6GHz
   High power added efficiency
      P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
   Low distortion [item -51]
      IM3=-45dBc(Typ.) @Po=28dBm S.C.L.


APPLICATION
   item 01 : 3.4 - 3.6 GHz band power amplifier
   item 51 : 3.4 - 3.6 GHz band digital ratio communication

Page Link's: 1  2 

Part Name
Description
PDF
MFG CO.
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC

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