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MGFC39V4450A Datasheet - MITSUBISHI ELECTRIC

MGFC39V4450A image

Part Name
MGFC39V4450A

Other PDF
  1997   2011  

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page
2 Pages

File Size
179 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal ceramic package guarantees high reliability.


FEATURES
   Class A operation
   Internally matched to 50(ohm) system
   High output power
      P1dB = 8W (TYP.) @ f=4.4~5.0GHz
   High power gain
      GLP = 11.5 dB (TYP.) @ f=4.4~5.0GHz
   High power added efficiency
      P.A.E. = 30 % (TYP.) @ f=4.4~5.0GHz
   Low distortion [ item -51 ]
      IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.


APPLICATION
   item 01 : 4.4~5.0 GHz band power amplifier
   item 51 : 4.4~5.0 GHz band digital radio communication

Page Link's: 1  2 

Part Name
Description
PDF
MFG CO.
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
4.4 ~ 5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET
Mitsumi
4.4-5.0GHz, 10W Internally Matched Power FET ( Rev : 2004 )
Excelics Semiconductor, Inc.
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC

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