MGFC45V3436A(1999) View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
View to exact match
MGFC45V3436A Datasheet PDF : 2 Pages
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PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
TYPICAL CHARACTERISTICS
P1dB,GLP vs. f
47
VDS=10V
46 IDS=8.0A
45
P1dB
44
GLP
43
42
41
40
3.3
3.4
3.5
3.6
FREQUENCY f (GHz)
42
VDS=10V
40 IDS=8A
f1=3.600GHz
38
f2=3.605GHz
2-tone test
36
Po,IM3 vs. f
Po
16
15
14
13
12
11
10
9
3.7
20
10
0
-10
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3436A
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
Po, P.A.E. vs. Pin
46
100
44
VDS=10V
IDS=8A
42 f=3.5GHz
80
Po
40
38
60
36
34
40
32
30
20
P.A.E.
28
26
0
17 19 21 23 25 27 29 31 33 35 37
INPUT POWER Pin (dBm)
34
-20
32
-30
30
-40
IM3
28
-50
26
-60
24
16
18
20
22
24
26
28
INPUT POWER Pin (dBm S.C.L.)
-70
30
S parameters
f
(GHz)
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
Magn.
0.54
0.51
0.49
0.50
0.51
0.53
0.55
0.56
0.56
( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
S11
S21
Angle(deg)
Magn.
Angle(deg)
Magn.
-95
3.01
104
0.03
-121
3.27
87
0.03
-146
3.45
73
0.04
-171
3.58
59
0.04
165
3.71
42
0.05
144
3.80
27
0.06
125
3.82
14
0.06
110
3.81
-1
0.06
93
3.84
-15
0.07
S12
Angle(deg)
43
29
13
-12
-21
-37
-52
-69
-80
Magn.
0.60
0.56
0.50
0.44
0.39
0.34
0.29
0.24
0.22
S22
Angle(deg)
13
3
-6
-17
-29
-42
-56
-74
-94
MITSUBISHI
ELECTRIC
Mar.'99
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