datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  MITSUBISHI ELECTRIC   >>> MGFC39V3742A_04 PDF

MGFC39V3742A_04 Datasheet - MITSUBISHI ELECTRIC

MGFC39V3742A image

Part Name
MGFC39V3742A_04

Other PDF
  no available.

PDF
DOWNLOAD     

page
2 Pages

File Size
179.1 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
    Class A operation
    Internally matched to 50(ohm) system
    High output power
        P1dB = 8W (TYP.) @ f=3.7~4.2GHz
    High power gain
        GLP = 12 dB (TYP.) @ f=3.7~4.2GHz
    High power added efficiency
        P.A.E. = 31 % (TYP.) @ f=3.7~4.2GHz
    Low distortion [ item -51 ]
        IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.


APPLICATION
    item 01 : 3.7~4.2 GHz band power amplifier
    item 51 : 3.7~4.2 GHz band digital radio communication

Page Link's: 1  2 

Part Name
Description
PDF
MFG CO.
3.7~4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.6 ~ 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
Mitsumi
3.6 ~ 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]