datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  MITSUBISHI ELECTRIC   >>> MGFC41V3642 PDF

MGFC41V3642 Datasheet - MITSUBISHI ELECTRIC

MGFC41V3642 image

Part Name
MGFC41V3642

Other PDF
  1997  

PDF
DOWNLOAD     

page
2 Pages

File Size
216 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.


FEATURES
    Internally matched to 50ohm system
    High output power
        P1dB = 14W (TIP.) @ f=3.6 - 4.2 Hz
    High power gain
        GLP = 12.5 dB (TYP.) @ f=3.6 - 4.2 GHz
    High power added efficiency
        Eadd = 40 % (TYP.) @ f=3.6 - 4.2 GHz
    Low Distortion[Item-51]
        IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.


APPLICATION
    item 01 : 3.6 - 4.2 GHz band power amplifier
    item 51 : 3.6 - 4.2 GHz band digital radio communication

Page Link's: 1  2 

Part Name
Description
PDF
MFG CO.
3.6 ~ 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
Mitsumi
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7~4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]