IPD025N06N(2014) Datasheet - Infineon Technologies
Part Name
IPD025N06N
Other PDF
PDF
page
12 Pages
File Size
1.1 MB
MFG CO.
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 60V
FEATUREs
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Part Name
Description
PDF
MFG CO.
Metal Oxide Semiconductor Field Effect Transistor ( Rev : 2013 )
Infineon Technologies
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