IPD025N06N(2014) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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IPD025N06N Datasheet PDF : 12 Pages
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OptiMOSTMPower-Transistor,60V
IPD025N06N
Diagram9:Drain-sourceon-stateresistance
6.0
Diagram10:Typ.gatethresholdvoltage
5
5.5
5.0
4
4.5
4.0
3.5
max
3.0
2.5
typ
2.0
3
950 µA
95 µA
2
1.5
1
1.0
0.5
0.0
-60
-20
20
60
100
140
180
Tj[°C]
0
-60
-20
20
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=90A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
104
Ciss
103
Coss
Diagram12:Forwardcharacteristicsofreversediode
103
25 °C
175 °C
102
102
Crss
101
0
20
40
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
101
100
60
0.0
0.5
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
9
Rev.2.5,2014-07-23
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