IPD025N06N(2014) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
IPD025N06N Datasheet PDF : 12 Pages
| |||
OptiMOSTMPower-Transistor,60V
IPD025N06N
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
60
2.1
-
-
-
-
-
-
80
Values
Typ. Max.
-
-
2.8 3.3
0.5 1
10 100
10 100
2.1 2.5
2.7 3.8
1.7 2.6
160 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=95µA
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=90A
VGS=6V,ID=22.5A
Ω-
S
|VDS|>2|ID|RDS(on)max,ID=90A
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
5200 6500
1200 1500
48 96
16 -
20 -
34 -
12 -
Unit Note/TestCondition
pF VGS=0V,VDS=30V,f=1MHz
pF VGS=0V,VDS=30V,f=1MHz
pF VGS=0V,VDS=30V,f=1MHz
ns
VDD=30V,VGS=10V,ID=90A,
RG,ext,ext=1.6Ω
ns
VDD=30V,VGS=10V,ID=90A,
RG,ext,ext=1.6Ω
ns
VDD=30V,VGS=10V,ID=90A,
RG,ext,ext=1.6Ω
ns
VDD=30V,VGS=10V,ID=90A,
RG,ext,ext=1.6Ω
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.5,2014-07-23
Share Link: 