PD45128163G5-A10LI-9JF View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

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PD45128163G5-A10LI-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Elpida Memory, Inc 

µPD45128441-I, 45128841-I, 45128163-I

13. Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 100 µs and then, execute Power on sequence and CBR (auto) Refresh before

proper device operation is achieved.

Absolute Maximum Ratings

Parameter

Voltage on power supply pin relative to GND

Voltage on any pin relative to GND

Short circuit output current

Power dissipation

Operating ambient temperature

Storage temperature

Symbol

VCC, VCCQ

VT

IO

PD

TA

Tstg

Condition

Rating

Unit

−0.5 to +4.6

V

−0.5 to +4.6

V

50

mA

1

W

−40 to + 85

°C

−55 to + 125

°C

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum

Rating conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter

Supply voltage

High level input voltage

Low level input voltage

Operating ambient temperature

Symbol

VCC, VCCQ

VIH

VIL

TA

Notes 1. VIH (MAX.) = VCC + 1.5 V (Pulse width ≤ 5 ns)

2. VIL (MIN.) = –1.5 V (Pulse width ≤ 5 ns)

Condition

MIN.

3.0

2.0

−0.3Note2

−40

TYP.

3.3

MAX. Unit

3.6

V

VCC+0.3Note1 V

+0.8

V

85

°C

Pin Capacitance (TA = 25 °C, f = 1 MHz)

Parameter

Symbol

Input capacitance

CI1

CI2

Data input / output capacitance

CI/O

Condition

MIN. TYP. MAX. Unit

CLK

2.5

3.5 pF

A0 - A11, BA0(A13), BA1(A12), CKE, 2.5

/CS, /RAS, /CAS, /WE, DQM, UDQM,

LDQM

DQ0 - DQ15

4

3.8

6.5 pF

34

Preliminary Data Sheet E0233N10

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