BSB013NE2LXI View Datasheet(PDF) - Infineon Technologies
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Description
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BSB013NE2LXI Datasheet PDF : 11 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
2
BSB013NE2LXI
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=10 mA
2.5
1.6
2
1.2
1.5
typ
0.8
1
0.4
0.5
0
-40
0
40
80
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
120
160
0
-40
0
40
80
120
160
Tj [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
Coss
103
102
25 °C
150 °C 100 °C
-40 °C
101
100
Crss
102
0
Rev. 2.4
5
10
15
20
25
VDS [V]
10-1
0
0.2
0.4
0.6
0.8
1
VSD [V]
page 6
2013-02-12
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