BSB013NE2LXI View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BSB013NE2LXI

OptiMOS™ Power-MOSFET

Infineon Technologies 

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Power dissipation

P tot

T C=25 °C

T A=25 °C,

R thJA=45 K/W

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

BSB013NE2LXI

Value

Unit

57

W

2.8

-40 … 150

°C

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC bottom

-

1.0

- K/W

top

-

-

2.2

Device on PCB

R thJA 6 cm2 cooling area3)

-

-

45

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=10 mA

25

-

-V

Breakdown

voltage

temperature

coefficd/dieVTn(Bjt R)DSS

I D=10 mA,

to 25 °C

referenced

-

15

- mV/K

Gate threshold voltage

V GS(th) V DS=V GS, I D=250 µA

1.2

-

2V

Zero gate voltage drain current

I DSS

V DS=20 V, V GS=0 V,

T j=25 °C

-

25

500 µA

V DS=20 V, V GS=0 V,

T j=125 °C

-

4

- mA

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100 nA

Drain-source on-state resistance

R DS(on) V GS=4.5 V, I D=30 A

-

1.4

1.8 mW

V GS=10 V, I D=30 A

-

1.1

1.3

Gate resistance

RG

0.3

0.6

1.2 W

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=30 A

85

170

-S

Rev. 2.4

page 2

2013-02-12

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