BSB013NE2LXI View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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BSB013NE2LXI Datasheet PDF : 11 Pages
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Parameter
Symbol Conditions
BSB013NE2LXI
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=12 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=12 V, V GS=10 V,
-
t d(off)
I D=30 A, R G=1.6 W
-
tf
-
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Q gs
-
Q g(th)
-
Q gd
V DD=12 V, I D=30 A,
-
Q sw
V GS=0 to 4.5 V
-
Qg
-
V plateau
-
Gate charge total
Qg
V DD=12 V, I D=30 A,
V GS=0 to 10 V
-
Gate charge total, sync. FET
Output charge
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
Q oss
V DD=12 V, V GS=0 V
-
Reverse Diode
Diode continuous forward current I S
-
T C=25 °C
Diode pulse current
I S,pulse
-
Diode forward voltage
V SD
V GS=0 V, I F=12 A,
T j=25 °C
-
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
6) See figure 16 for gate charge parameter definition
4400
1900
190
5.4
6.4
32
4.8
5900 pF
2500
-
- ns
-
-
-
10.5 14.0 nC
7.1
9.4
7.3
10.9
10.7 15.5
30
40
2.4
-V
62
83 nC
26
35
39
52
-
57 A
-
228
0.55
0.7 V
5
- nC
Rev. 2.4
page 3
2013-02-12
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