SI1141(2011) View Datasheet(PDF) - Silicon Laboratories
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SI1141 Datasheet PDF : 66 Pages
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Si1141/42/43
Table 3. Performance Characteristics1
Parameter
Symbol
Conditions
Min Typ Max Units
IDD OFF Mode
Ioff
VDD < VDD_OFF (leakage from SCL,
SDA, and INT not included)
— 240
1000
nA
IDD Standby Mode
No ALS / PS Conversions
Isb
No I2C Activity
— 150
500
nA
after t > TBD µs, VDD = 1.8 V
IDD Standby Mode
No ALS / PS Conversions
Isb
No I2C Activity
— 1.83
—
µA
after t > TBD µs, VDD =3.3 V
IDD Actively Measuring
Iactive Without LED influence, VDD = 3.3 V — 4.3
5.2
mA
Peak IDD while LED1,
LED2, or LED3 is Actively
Driven
VDD = 3.3 V
—8
—
mA
LED1, LED2, LED3,
Saturation Voltage2
1.8< VDD<2.4, ILEDx<100 mA
1.8<VDD<2.4, ILEDx< 200 mA
2.4<VDD<3.6, ILEDx<200 mA
2.4<VDD<3.6, ILEDx<359 mA
— 0.3
—
— 0.5
—
— 0.3
—
V
— 0.5
—
LED1, LED2, LED3
Pulse Width
tPS
— 25.6
30
µs
LED1, LED2, LED3
Leakage Current
VDD = 3.3 V, VLEDx<3.0, no strobe
— .01
VDD = 3.3 V, 3.0<VLEDx< 5.0, no strobe — 1.0
5.0
5.0
µA
Notes:
1. Unless specifically stated in "Conditions", electrical data assumes ambient light levels < 1 klx.
2. Proximity-detection performance may be degraded, especially when there is high optical crosstalk, if the LED supply
and voltage drop allow the driver to saturate and current regulation is lost.
3. Represents the time during which the device is drawing a current equal to Iactive for power estimation purposes.
Assumes default settings.
4. Applies to single 25.6 µs pulse measurement. By increasing irLED pulse width, 0.001 µW/cm2 under low light is
possible.
5. ALS Sensitivity under low light conditions can be improved by increasing ADC integration time. 10 mlx resolution
possible under the highest ADC integration time setting.
Preliminary Rev. 0.5
5
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