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M27C2001-70F1(1995) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
M27C2001-70F1
(Rev.:1995)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M27C2001-70F1 Datasheet PDF : 14 Pages
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M27C2001
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
VIO (2)
Storage Temperature
Input or Output Voltages (except A9)
–65 to 150
°C
–2 to 7
V
VCC
VA9 (2)
Supply Voltage
A9 Voltage
–2 to 7
V
–2 to 13.5
V
VPP
Program Supply Voltage
–2 to 14
V
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
Table 3. Operating Modes
Mode
E
Read
VIL
Output Disable
VIL
Program
VIL
Verify
VIL
Program Inhibit
VIH
Standby
VIH
Electronic Signature
VIL
Note: X = VIH or VIL, VID = 12V ± 0.5V
Table 4. Electronic Signature
Identifier
Manufacturer’s Code
Device Code
A0
Q7
VIL
0
VIH
0
G
P
A9
VPP
Q0 - Q7
VIL
X
X
VCC or VSS
Data Out
VIH
X
X
VCC or VSS
Hi-Z
VIH
VIL Pulse
X
VPP
Data In
VIL
VIH
X
VPP
Data Out
X
X
X
VPP
Hi-Z
X
X
X
VCC or VSS
Hi-Z
VIL
VIH
VID
VCC
Codes
Q6
Q5
Q4
Q3
Q2
Q1
Q0 Hex Data
0
1
0
0
0
0
0
20h
1
1
0
0
0
0
1
61h
Two Line Output Control
BecauseEPROMs are usually used in larger mem-
ory arrays, this product features a 2 line control
function which accommodates the use of multiple
memory connection. The two line control function
allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while G should be made
a common connection to all devices in the array
and connected to the READ line from the system
control bus. This ensures that all deselected mem-
ory devices are in their low power standby mode
and that the output pins are only active when data
is required from a particular memory device.
3/14

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